PBSS4160U_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 60 V, 1 A NPN low VCEsat (BISS) transistor

PBSS4160U
60 V, 1 A NPN low V_CEsat (BISS) transistor
Rev. 03 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70)
Surface Mounted Device (SMD) plastic package.
PNP complement: PBSS5160U.
1.2 Features
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability: I_C and I_CM
„ High collector current gain (h_FE) at high I_C
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ High voltage DC-to-DC conversion
„ High voltage MOSFET gate driving
„ High voltage motor control
„ High voltage power switches (e.g. motors, fans)
„ Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_CEO
I_C
collector-emitter voltage
collector current (DC)
open base
-
-
60 V
[1] _-
-
1
A
I_CM
R_CEsat
peak collector current
single pulse; t_p ≤ 1 ms
-
collector-emitter saturation I_C = 1 A; I_B = 100 mA ^[2] -
resistance
-
2
A
230 280 mΩ
[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[2] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.