PBSS4160DS_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

PBSS4160DS
60 V, 1 A NPN/NPN low V_CEsat (BISS) transistor
Rev. 04 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457
(SC-74) Surface Mounted Device (SMD) plastic package.
PNP/PNP complement: PBSS5160DS.
1.2 Features
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability: I_C and I_CM
„ High collector current gain (h_FE) at high I_C
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ Dual low power switches (e.g. motors, fans)
„ Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per transistor
V_CEO
I_C
I_CM
collector-emitter voltage
collector current
peak collector current
R_CEsat
collector-emitter saturation
resistance
Conditions
open base
single pulse;
t_p ≤ 1 ms
I_C = 1 A;
I_B = 100 mA
[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[2] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
-
-
60 V
[1] _-
-
1
A
-
-
2
A
[2] _-
200 250 mΩ