PBSS4160DPN Datasheet, PDF (1/14 Pages) NXP Semiconductors – 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

PBSS4160DPN
60 V, 1 A NPN/PNP low V_CEsat (BISS) transistor
Rev. 01 — 3 June 2004
Objective data sheet
1. Product profile
1.1 General description
NPN/PNP low V_CEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package.
1.2 Features
s Low collector-emitter saturation voltage V_CEsat
s High collector current capability I_C and I_CM
s High efficiency, reduces heat generation
s Reduces printed-circuit board area required.
1.3 Applications
s Power management
x DC-to-DC conversion
x Supply line switching
s Peripheral driver
x Inductive load drivers (e.g. relays, buzzers and motors)
x Driver in low supply voltage applications (e.g. lamps and LEDs).
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
V_CEO
I_C
I_CRP
R_CEsat
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
equivalent on-resistance
Min Typ Max
Unit
NPN PNP
-
-
60 −60 V
-
-
1
−1 A
-
-
2
−1.5 A
-
-
250 330 mΩ