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PBSS4041PT_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 60 V, 2.7 A PNP low VCEsat (BISS) transistor | |||
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PBSS4041PT
60 V, 2.7 A PNP low VCEsat (BISS) transistor
Rev. 02 â 9 March 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4041NT.
1.2 Features and benefits
 Very low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 High collector current gain (hFE) at high IC
 High energy efficiency due to less heat generation
 AEC-Q101 qualified
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
 Loadswitch
 Battery-driven devices
 Power management
 Charging circuits
 Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ⤠1 ms
IC = â3 A;
IB = â300 mA
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Min Typ Max Unit
-
-
â60 V
-
-
â2.7 A
-
-
â8
A
[1] -
80
120 mΩ
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