PBSS4041NZ_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 60 V, 7 A NPN low VCEsat (BISS) transistor

PBSS4041NZ
60 V, 7 A NPN low VCEsat (BISS) transistor
Rev. 2 — 8 August 2012
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4041PZ.
1.2 Features and benefits
 Very low collector-emitter saturation
voltage V_CEsat
 High collector current capability I_C and
I_CM
 High collector current gain (h_FE) at
high I_C
1.3 Applications
 Loadswitch
 Battery-driven devices
 Power management
 High energy efficiency due to less heat
generation
 AEC-Q101 qualified
 Smaller required PCB area than for
conventional transistors
 Charging circuits
 Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
single pulse; t_p ≤ 1 ms
I_C = 6 A; I_B = 600 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02 ; T_amb = 25 °C
Min Typ Max Unit
-
-
60 V
-
-
7
A
-
-
15 A
-
17.5 25
mΩ