PBSS4041NX_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 60 V, 6.2 A NPN low VCEsat (BISS) transistor

PBSS4041NX
60 V, 6.2 A NPN low VCEsat (BISS) transistor
11 December 2012
Product data sheet
1. Technical summary
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4041PX.
2. Features and benefits
• Very low collector-emitter saturation voltage V_CEsat
• High collector current capability I_C and I_CM
• High collector current gain (h_FE) at high I_C
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
3. Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; t_p ≤ 1 ms
collector-emitter
saturation resistance
I_C = 4 A; I_B = 400 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02 ; T_amb = 25 °C
Min Typ Max Unit
-
-
60
V
-
-
6.2 A
-
-
15
A
-
25
35
mΩ
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