PBSS3540E Datasheet, PDF (1/11 Pages) NXP Semiconductors – 40 V, 500 mA PNP low VCEsat (BISS) transistor

PBSS3540E
40 V, 500 mA PNP low V_CEsat (BISS) transistor
Rev. 01 — 3 May 2005
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD
plastic package.
NPN complement: PBSS2540E.
1.2 Features
s Low collector-emitter saturation voltage V_CEsat
s High collector current capability: I_C and I_CM
s High collector current gain (h_FE) at high I_C
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Low power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter
saturation resistance
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
I_C = −500 mA;
I_B = −50 mA
Min Typ Max
Unit
-
-
−40
V
-
-
−500 mA
-
-
−1
A
[1] _-
440 700
mΩ