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PBSS306NX Datasheet, PDF (1/15 Pages) NXP Semiconductors – 100 V, 4.5 A NPN low VCEsat (BISS) transistor
PBSS306NX
100 V, 4.5 A NPN low VCEsat (BISS) transistor
Rev. 01 — 21 August 2006
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS306PX.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High-voltage DC-to-DC conversion
I High-voltage MOSFET gate driving
I High-voltage motor control
I High-voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
-
collector current
-
peak collector current
single pulse;
-
tp ≤ 1 ms
collector-emitter saturation IC = 4 A;
[1] -
resistance
IB = 200 mA
-
100 V
-
4.5
A
-
9
A
40
56
mΩ
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
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