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| PBSS303NX Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, 5.1 A NPN low VCEsat (BISS) transistor | |||
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PBSS303NX
30 V, 5.1 A NPN low VCEsat (BISS) transistor
Rev. 01 â 23 August 2006
Product data sheet
1. Product proï¬le
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and ï¬at lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS303PX.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efï¬ciency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I DC-to-DC conversion
I MOSFET gate driving
I Motor control
I Charging circuits
I Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO
IC
ICM
collector-emitter voltage
collector current
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp ⤠300 µs; δ ⤠0.02.
Conditions
open base
single pulse;
tp ⤠1 ms
IC = 4 A;
IB = 200 mA
Min Typ Max
-
-
30
-
-
5.1
-
-
10.2
[1] -
31
44
Unit
V
A
A
mâ¦
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