PBSS301ND Datasheet, PDF (1/16 Pages) NXP Semiconductors – 20 V, 4 A NPN low VCEsat (BISS) transistor

PBSS301ND
20 V, 4 A NPN low V_CEsat (BISS) transistor
Rev. 02 — 25 April 2005
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD
plastic package.
PNP complement: PBSS301PD.
1.2 Features
s Very low collector-emitter saturation resistance
s Ultra low collector-emitter saturation voltage
s 4 A continuous collector current
s Up to 15 A peak current
s High efficiency due to less heat generation
1.3 Applications
s Power management functions
s Charging circuits
s DC-to-DC conversion
s MOSFET gate driving
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current (DC)
peak collector current
collector-emitter saturation
resistance
single pulse;
t_p ≤ 1 ms
I_C = 4 A;
I_B = 400 mA
Min Typ Max
-
-
20
[1] _-
-
4
-
-
15
[2] _-
50
70
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
[2] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Unit
V
A
A
mΩ