NXPSC08650_15 Datasheet, PDF (1/9 Pages) NXP Semiconductors – Silicon Carbide Diode

NXPSC08650
Silicon Carbide Diode
4 May 2015
Product data sheet
1. General description
Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for
high frequency switched-mode power supplies.
2. Features and benefits
• Highly stable switching performance
• High forward surge capability I_FSM
• Extremely fast reverse recovery time
• Superior in efficiency to Silicon Diode alternatives
• Reduced losses in associated MOSFET
• Reduced EMI
• Reduced cooling requirements
• RoHS compliant
3. Applications
• Power factor correction
• Telecom/Server SMPS
• UPS
• PV inverter
• PC Silverbox
• LED/OLED TV
• Motor Drives
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_RRM
repetitive peak reverse
voltage
I_F(AV)
average forward
current
δ = 0.5; T_mb ≤ 120 °C; square-wave
pulse; Fig. 1; Fig. 2
T_j
junction temperature
Static characteristics
V_F
forward voltage
I_F = 8 A; T_j = 25 °C; Fig. 4
Min Typ Max Unit
-
-
650 V
-
-
8
A
-
-
175 °C
-
1.5 1.7 V
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