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NXPS20S100C_15 Datasheet, PDF (1/9 Pages) NXP Semiconductors – Dual power Schottky diode
NXPS20S100C
Dual power Schottky diode
30 January 2013
Product data sheet
1. General description
Dual common cathode power Schottky diode designed for high frequency switched mode
power supplies in a SOT78 (TO-220AB) plastic package.
2. Features and benefits
• High junction temperature capability
• Low leakage current
• Negligible switching losses
• Optimised design to give low VF and high Tj(max)
3. Applications
• DC to DC converters
• Freewheeling diode
• OR-ing diode
• Switched mode power supply rectifier
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5 ; Tmb ≤ 157 °C; square-wave
pulse; per diode; Fig. 1; Fig. 2; Fig. 3
IO(AV)
average output current δ = 0.5 ; square-wave pulse; both
diodes conducting
Tj
junction temperature
Static characteristics
VF
forward voltage
IF = 3 A; Tj = 125 °C; Fig. 6
IR
reverse current
VR = 100 V; Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
100 V
-
-
10
A
-
-
20
A
-
-
175 °C
-
0.53 0.58 V
-
-
3
µA
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