NXPS20H110C_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Dual power Schottky diode

NXPS20H110C
Dual power Schottky diode
Rev. 2 — 24 May 2012
Product data sheet
1. Product profile
1.1 General description
Dual common cathode power Schottky diode designed for high frequency switched mode
power supplies in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
 High junction temperature capability
 Low leakage current
1.3 Applications
 DC to DC converters
 Freewheeling diode
 Negligible switching losses
 Optimised design to give low V_F and
high T_j(max)
 OR-ing diode
 Switched mode power supply rectifier
1.4 Quick reference data
Table 1.
Symbol
V_RRM
I_F(AV)
Quick reference data
Parameter
repetitive peak reverse voltage
average forward current
I_O(AV)
average output current
T_j
junction temperature
Static characteristics
V_F
forward voltage
I_R
reverse current
Conditions
square-wave pulse; δ = 0.5 ;
T_j ≤ 163 °C; per diode; see Figure 1;
see Figure 2; see Figure 3
square-wave pulse; δ = 0.5 ;
T_mb ≤ 161 °C; both diodes conducting
I_F = 10 A; T_j = 25 °C; see Figure 6
I_F = 10 A; T_j = 125 °C; see Figure 6
V_R = 110 V; T_j = 25 °C; see Figure 7
V_R = 110 V; T_j = 125 °C; see Figure 7
Min Typ Max Unit
-
-
110 V
-
-
10 A
-
-
20 A
-
-
175 °C
-
-
0.77 V
-
0.59 0.64 V
-
2.5 6
µA
-
1.5 6.5 mA