NXPS20H100C_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Dual power Schottky diode

NXPS20H100C
Dual power Schottky diode
Rev. 2 — 8 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual common cathode power Schottky diode designed for high frequency switched mode
power supplies in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
 High junction temperature capability
 Low leakage current
1.3 Applications
 DC to DC converters
 Freewheeling diode
 Negligible switching losses
 Optimised design to give low V_F and
high T_j(max)
 OR-ing diode
 Switched mode power supply rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_RRM
repetitive peak reverse
voltage
I_F(AV)
average forward
current
square-wave pulse; δ = 0.5 ;
T_mb ≤ 163 °C; per diode;
see Figure 1; see Figure 2; see Figure 3
I_O(AV)
average output current square-wave pulse; δ = 0.5 ;
T_mb ≤ 161 °C; both diodes conducting
T_j
junction temperature
Static characteristics
V_F
forward voltage
I_F = 10 A; T_j = 25 °C; see Figure 6
I_F = 10 A; T_j = 125 °C; see Figure 6
I_R
reverse current
V_R = 100 V; T_j = 25 °C; see Figure 7
V_R = 100 V; T_j = 125 °C; see Figure 7
Min Typ Max Unit
-
-
100 V
-
-
10 A
-
-
20 A
-
-
175 °C
-
-
0.77 V
-
0.59 0.64 V
-
2
4.5 µA
-
1
6
mA