NXPS20H100CX_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Dual power Schottky diode

NXPS20H100CX
Dual power Schottky diode
Rev. 2 — 24 May 2012
Product data sheet
1. Product profile
1.1 General description
Dual common cathode power Schottky diode designed for high frequency switched mode
power supplies in a SOT186A (TO-220F) "full pack" plastic package.
1.2 Features and benefits
 High junction temperature capability
 Isolated package
 Low leakage current
 Negligible switching losses
 Optimised design to give low V_F and
high T_j(max)
1.3 Applications
 DC to DC converters
 Freewheeling diode
 OR-ing diode
 Switched mode power supply rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_RRM
I_F(AV)
repetitive peak reverse voltage
average forward current
square-wave pulse; δ = 0.5 ;
T_h ≤ 147 °C; per diode; see Figure 1;
see Figure 2; see Figure 3
I_O(AV)
average output current
square-wave pulse; δ = 0.5 ;
T_h ≤ 128 °C; both diodes conducting
T_j
junction temperature
Static characteristics
V_F
forward voltage
I_F = 10 A; T_j = 25 °C; see Figure 6
I_F = 10 A; T_j = 125 °C; see Figure 6
I_R
reverse current
V_R = 100 V; T_j = 25 °C; see Figure 7
V_R = 100 V; T_j = 125 °C; see Figure 7
Min Typ Max Unit
-
-
100 V
-
-
10 A
-
-
20 A
-
-
175 °C
-
-
0.77 V
-
0.59 0.64 V
-
2
4.5 µA
-
1
6
mA