NX7002BKXB_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – 60 V, dual N-channel Trench MOSFET

NX7002BKXB
60 V, dual N-channel Trench MOSFET
30 June 2015
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Logic-level compatible
• Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
V_DS
drain-source voltage T_j = 25 °C
-
-
60
V
V_GS
gate-source voltage
-20 -
20
V
I_D
drain current
V_GS = 10 V; T_sp = 25 °C
-
-
330 mA
V_GS = 10 V; T_amb = 25 °C
[1]
-
-
260 mA
Static characteristics (per transistor)
R_DSon
drain-source on-state V_GS = 10 V; I_D = 200 mA; T_j = 25 °C
resistance
-
2.2 2.8 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
for drain 1 cm².
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