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NX7002BKW_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 60 V, single N-channel Trench MOSFET | |||
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NX7002BKW
60 V, single N-channel Trench MOSFET
20 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323
(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
⢠Logic-level compatible
⢠Very fast switching
⢠Trench MOSFET technology
⢠ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
⢠Relay driver
⢠High-speed line driver
⢠Low-side loadswitch
⢠Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj = 25 °C
-
-
60
V
VGS
gate-source voltage
-20 -
20
V
ID
drain current
VGS = 10 V; Tsp = 25 °C
-
-
330 mA
VGS = 10 V; Tamb = 25 °C
[1]
-
-
240 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C
resistance
-
2.2 2.8 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
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