|
NX7002AKS_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 60 V, dual N-channel Trench MOSFET | |||
|
NX7002AKS
60 V, dual N-channel Trench MOSFET
Rev. 1 â 1 March 2012
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
ï® Very fast switching
ï® Trench MOSFET technology
ï® ESD protection
1.3 Applications
ï® Relay driver
ï® High-speed line driver
ï® Low-side load switch
ï® Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS
drain-source voltage Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C
resistance
Min Typ Max Unit
-
-
-20 -
-
-
60 V
20 V
170 mA
-
3
4.5 â¦
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
|
▷ |