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NX5P3001_15 Datasheet, PDF (1/20 Pages) NXP Semiconductors – Bidirectional high-side power switch for charger and USB-OTG combined applications | |||
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NX5P3001
Bidirectional high-side power switch for charger and
USB-OTG combined applications
Rev. 1 â 11 September 2013
Product data sheet
1. General description
The NX5P3001 is an advanced bidirectional power switch and ESD-protection device for
combined USB-OTG and charger port applications. It includes undervoltage lockout,
overvoltage lockout and overtemperature protection circuits designed to automatically
isolate the power switch terminals when a fault condition occurs.
The device features two power switch input/output terminals (VBUSI and VBUSO), an
open-drain acknowledge output (ACK), an enable input which includes logic level
translation (EN) and low capacitance Transient Voltage Suppression (TVS) type
ESD-clamps for USB data and ID pins.
When EN is set HIGH the device enters a low-power mode, disabling all protection
circuits. When used in combined charger and USB-OTG applications the 30 V tolerant
VBUSI switch terminal is used as the supply and switch input when charging, for
USB-OTG the VBUSO switch terminal is used as the supply and switch input.
Designed for operation from 3.2 V to 6.35 V, it is used in battery charging and power
domain isolation applications to reduce power dissipation and extend battery life.
2. Features and benefits
ï® 30 V tolerant VBUSI supply pin
ï® Wide supply voltage range from 3.2 V to 6.35 V
ï® Automatic switch operation for charging within the supply range
ï® ISW maximum 3 A continuous current
ï® Low ON resistance: 62 mï (typical) at a supply voltage of 5.0 V
ï® 1.8 V control logic input to open the switch
ï® Soft start turn-on slew rate
ï® Protection circuitry
ïµ Overtemperature protection
ïµ Overvoltage lockout
ïµ Undervoltage lockout
ï® ESD protection:
ïµ HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
ïµ CDM AEC standard Q100-01 (JESD22-C101E)
ïµ IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUSI, Dï, D+ and ID
ï® Specified from ï40 ï°C to +85 ï°C
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