NX5P2190_15 Datasheet, PDF(1/20 Page) NXP Semiconductors – Logic controlled high-side power switch

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NX5P2190_15 Datasheet, PDF (1/20 Pages) NXP Semiconductors – Logic controlled high-side power switch

NX5P2190

Logic controlled high-side power switch

Rev. 1.1 â 15 January 2015

Product data sheet

1. General description

The NX5P2190 is an advanced power switch with adjustable current limit. It includes

under-voltage and over-voltage lockout, over-current, over-temperature, reverse bias and

in-rush current protection circuits. These circuits are designed to isolate a voltage source

from a VBUS interface pin automatically when a fault occurs. The device features two

power switch terminals, one input (VINT) and one output (VBUS). A current limit input

(ILIM) defines the over-current and in-rush current limit, and a voltage detect output

(VDET) monitors the voltage level on VBUS. An open-drain fault output (FAULT) indicates

when a fault condition occurs. An enable input (EN) controls the state of the switch. When

EN is set LOW the device enters a low-power mode, disabling all protection circuits

except the under-voltage lockout. The low-power mode can be entered at anytime unless

the over temperature protection circuit has been triggered.

Designed for operation from 3 V to 5.5 V, the NX5P2190 is a complete solution for power

domain isolation and protection applications. The enable input includes integrated logic

level translation making the device compatible with lower voltage processors and

controllers.

2. Features and benefits

ï® Wide supply voltage range from 3 V to 5.5 V

ï® 30 V tolerant on VBUS

ï® ISW maximum 2 A continuous current

ï® Very low ON resistance: 100 mï (maximum) at a supply voltage of 4.0 V

ï® Low-power mode (ground current 20 ïA typical)

ï® 1.8 V control logic

ï® Soft start turn-on slew rate

ï® Protection circuitry

ïµ Over-temperature protection

ïµ Over-current protection with low current output mode

ïµ Reverse bias current/Back drive protection

ïµ Over-voltage lockout

ïµ Under-voltage lockout

ïµ Analog voltage limited VBUS monitor path

ï® ESD protection:

ïµ HBM JDS-001 Class 2 exceeds 2 kV

ïµ IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUS

ï® Specified from ï40 ï°C to +85 ï°C

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