NX5P2090_15 Datasheet, PDF(1/20 Page) NXP Semiconductors – Logic controlled high-side power switch

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

NX5P2090_15 Datasheet, PDF (1/20 Pages) NXP Semiconductors – Logic controlled high-side power switch

NX5P2090

Logic controlled high-side power switch

Rev. 2.1 â 15 January 2015

Product data sheet

1. General description

The NX5P2090 is an advanced power switch for USB OTG applications. It includes

under-voltage and over-voltage lockout, over-current, over-temperature, reverse bias and

in-rush current protection circuits. These are designed to automatically isolate a VBUS

OTG voltage source from a VBUS interface pin when a fault occurs. The device features

two power switch terminals, one input (VINT) and one output (VBUS); a current limit input

(ILIM) for defining the over-current and in-rush current limit; a voltage detect output

(VDET) to monitor the voltage level on VBUS; an open-drain fault output (FAULT) to

indicate when a fault condition has occurred and an enable input (EN) to control the state

of the switch. When EN is set LOW the device enters a low-power mode, disabling all

protection circuits except the under-voltage lockout. The low-power mode can be entered

at anytime unless the over temperature protection circuit has been triggered.

Designed for operation from 3 V to 5.5 V, it is used in power domain isolation applications

to protect from out of range operation. The enable input includes integrated logic level

translation making the device compatible with lower voltage processors and controllers.

2. Features and benefits

ï® Wide supply voltage range from 3 V to 5.5 V

ï® 30 V tolerant on VBUS

ï® ISW maximum 2 A continuous current

ï® Very low ON resistance: 100 mï (maximum) at a supply voltage of 4.0 V

ï® Low-power mode (ground current 20 ïA typical)

ï® 1.8 V control logic

ï® Soft start turn-on slew rate

ï® Protection circuitry

ïµ Over-temperature protection

ïµ Over-current protection with low current output mode

ïµ Reverse bias current/Back drive protection

ïµ Over-voltage lockout

ïµ Under-voltage lockout

ïµ Analog voltage limited VBUS monitor path

ï® ESD protection:

ïµ HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV

ïµ IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUS

ï® Specified from ï40 ï°C to +85 ï°C

▷