NX5P1100_15 Datasheet, PDF(1/20 Page) NXP Semiconductors – Logic controlled high-side power switch

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

NX5P1100_15 Datasheet, PDF (1/20 Pages) NXP Semiconductors – Logic controlled high-side power switch

NX5P1100

Logic controlled high-side power switch

Rev. 1 â 21 March 2014

Product data sheet

1. General description

The NX5P1100 is an advanced power switch and ESD-protection device for USB OTG

applications. It includes under voltage and over voltage lockout, over-current,

over-temperature, reverse bias and in-rush current protection circuits. These circuits are

designed to isolate a VBUS OTG voltage source from a VBUS interface pin automatically

when a fault condition occurs. The device features two power switch terminals, one input

(VINT) and one output (VBUS). It has a current limit input (ILIM) for defining the

over-current and in-rush current limit. A voltage detect output (VDET) is used to determine

when VINT is in the correct voltage range. An open-drain fault output (FAULT) indicates

when a fault condition has occurred, and an enable input (EN) controls the state of the

switch. When EN is set LOW the device enters a low-power mode, disabling all protection

circuits except the undervoltage lockout. The low-power mode can be entered at anytime

unless the over temperature protection circuit has been triggered.

Designed for operation from 3 V to 5.5 V, it is used in power domain isolation applications

to protect from out of range operation. The enable input includes integrated logic level

translation making the device compatible with lower voltage processors and controllers.

2. Features and benefits

ï® Wide supply voltage range from 3 V to 5.5 V

ï® 30 V tolerant on VBUS

ï® ISW maximum 1 A continuous current

ï® Very low ON resistance: 100 mï (maximum) at a supply voltage of 4.0 V

ï® Low-power mode (ground current 20 ïA typical)

ï® 1.8 V control logic

ï® Soft start turn-on slew rate

ï® Protection circuitry

ïµ Over-temperature protection

ïµ Over-current protection with low current output mode

ïµ Reverse bias current/Back drive protection

ïµ Overvoltage lockout

ïµ Undervoltage lockout

ïµ Analog voltage limited VBUS monitor path

ï® ESD protection:

ïµ HBM ANSI/ESDA/JEDEC JDS-001 Class 2 exceeds 2 kV

ïµ CDM AEC standard Q100-011 category C6 exceeds 1 kV

ïµ IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUS, Dï, D+ and ID

ï® Specified from ï40 ï°C to +85 ï°C

▷