NX3020NAK_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, single N-channel Trench MOSFET

NX3020NAK
30 V, single N-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Very fast switching
• Trench MOSFET technology
• ESD protection
• Low threshold voltage
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = 10 V; T_amb = 25 °C
V_GS = 10 V; I_D = 100 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02 ; T_j = 25 °C
Min Typ Max Unit
-
-
30
V
-20 -
20
V
[1]
-
-
200 mA
-
2.7 4.5 Ω
[1] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm}²_.
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