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NX3008PBKV_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – 30 V, 220 mA dual P-channel Trench MOSFET | |||
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NX3008PBKV
30 V, 220 mA dual P-channel Trench MOSFET
Rev. 1 â 29 July 2011
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
ï® Very fast switching
ï® Low threshold voltage
ï® Trench MOSFET technology
ï® ESD protection up to 2 kV
ï® AEC-Q101 qualified
1.3 Applications
ï® Relay driver
ï® High-speed line driver
ï® High-side loadswitch
ï® Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS
drain-source voltage Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = -4.5 V; ID = -200 mA;
resistance
Tj = 25 °C
-
-8
[1] -
-
-
-30 V
-
8
V
-
-220 mA
2.8 4.1 â¦
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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