NX3008CBKS_15 Datasheet, PDF (1/21 Pages) NXP Semiconductors – 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very
small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Low threshold voltage
 Very fast switching
 Trench MOSFET technology
 ESD protection up to 2 kV
 AEC-Q101 qualified
1.3 Applications
 Level shifter
 Power supply converter
 Load switch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR2 (P-channel)
V_DS
drain-source voltage T_j = 25 °C
-
-
V_GS
gate-source voltage
-8 -
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C ^[1] -
-
TR1 (N-channel)
-30 V
8
V
-200 mA
V_DS
drain-source voltage T_j = 25 °C
-
-
V_GS
gate-source voltage
-8 -
I_D
drain current
V_GS = 4.5 V; T_amb = 25 °C ^[1] -
-
TR1 (N-channel), Static characteristics
30 V
8
V
350 mA
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 350 mA;
resistance
T_j = 25 °C
TR2 (P-channel), Static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V;
resistance
I_D = -200 mA; T_j = 25 °C
-
1
1.4 Ω
-
2.8 4.1 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².