NX2301P Datasheet, PDF (1/16 Pages) NXP Semiconductors – 20 V, 2 A P-channel Trench MOSFET

NX2301P
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 26 October 2010
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
„ 1.8 V R_DSon rated for Low Voltage Gate Drive
„ Very fast switching
„ Trench MOSFET technology
„ AEC-Q101 qualified
1.3 Applications
„ Relay driver
„ High-speed line driver
„ High-side loadswitch
„ Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
V_GS
I_D
R_DSon
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
T_amb = 25 °C
T_amb = 25 °C
T_amb = 25 °C;
V_GS = −4.5 V
T_j = 25 °C;
V_GS = −4.5 V;
I_D = −1 A
-
-
−20 V
-
-
±8
V
[1] _-
-
−2
A
[2] _-
100 120 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm², t ≤ 5 s.
[2] Pulse test: t_p ≤ 300 μs; δ ≤ 0.01.