NX1029X_15 Datasheet, PDF (1/20 Pages) NXP Semiconductors – 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET

NX1029X
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
Rev. 1 — 12 August 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Logic-level compatible
 Very fast switching
 Trench MOSFET technology
 ESD protection up to 2 kV (N-channel)
and 1 kV (P-channel)
 AEC-Q101 qualified
1.3 Applications
 Level shifter
 Power supply converter
 Load switch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
TR2 (P-channel)
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
TR1 (N-channel)
T_j = 25 °C
V_GS = -10 V; T_amb = 25 °C
V_DS
drain-source voltage T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = 10 V; T_amb = 25 °C
TR1 (N-channel), Static characteristics
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 500 mA;
pulsed; t_p ≤ 300 µs;
δ ≤ 0.01 ; T_j = 25 °C
TR2 (P-channel), Static characteristics
R_DSon
drain-source on-state V_GS = -10 V; I_D = -100 mA;
resistance
T_j = 25 °C
Min Typ Max Unit
--
-20 -
[1] _-
-
-50 V
20 V
-170 mA
--
-20 -
[1] _-
-
60 V
20 V
330 mA
-
1 1.6 Ω
-
4.5 7.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².