NUP1301_15 Datasheet, PDF(1/13 Page) NXP Semiconductors – Ultra low capacitance ESD protection array

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NUP1301_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Ultra low capacitance ESD protection array

NUP1301

Ultra low capacitance ESD protection array

Rev. 01 â 11 May 2009

Product data sheet

1. Product proï¬le

1.1 General description

Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to

protect one signal line in rail-to-rail conï¬guration from the damage caused by ESD

and other transients.

1.2 Features

I ESD protection of one signal line (rail-to-rail conï¬guration)

I Ultra low diode capacitance: Cd = 0.6 pF

I Very low reverse leakage current: â¤ 30 nA

I ESD protection up to 30 kV

I IEC 61000-4-2; level 4 (ESD)

I IEC 61000-4-5 (surge); IPP = 11 A at tp = 8/20 Âµs

I AEC-Q101 qualiï¬ed

1.3 Applications

I Telecommunication networks

I Video line protection

I Microcontroller protection

I I2C-bus protection

I Antenna power supply

I Analog audio

I Class-D ampliï¬er

1.4 Quick reference data

Table 1. Quick reference data

Tamb = 25 Â°C unless otherwise speciï¬ed.

Symbol Parameter

Conditions

Per diode

VRRM

repetitive peak reverse

voltage

diode capacitance

f = 1 MHz;

VR = 0 V

reverse current

VR = 80 V

Min Typ Max Unit

0.6 0.75 pF

100 nA

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