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| NUP1301U115 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Ultra low capacitance ESD protection array | |||
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NUP1301U
Ultra low capacitance ESD protection array
Rev. 1 â 28 January 2011
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package designed to
protect one signal line in rail-to-rail configuration from the damage caused by
ESD and other transients.
1.2 Features and benefits
ï® ESD protection of one signal line (rail-to-rail configuration)
ï® Ultra low diode capacitance: Cd = 0.6 pF
ï® ESD protection up to 30 kV
ï® IEC 61000-4-2; level 4 (ESD)
ï® IEC 61000-4-5 (surge); IPP = 11 A
ï® AEC-Q101 qualified
1.3 Applications
ï® Telecommunication networks
ï® Video line protection
ï® Microcontroller protection
ï® I2C-bus protection
ï® Antenna power supply
ï® Analog audio
ï® Class-D amplifier
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 ï°C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRRM
repetitive peak reverse
voltage
Cd
diode capacitance
f = 1 MHz;
VR = 0 V
IR
reverse current
VR = 80 V
Min Typ Max Unit
-
-
80
V
-
0.6 0.75 pF
-
-
100 nA
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