IRF830 Datasheet, PDF (1/7 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

Philips Semiconductors
PowerMOS transistor
Avalanche energy rated
Product specification
IRF830
FEATURES
SYMBOL
• Repetitive Avalanche Rated
• Fast switching
• High thermal cycling performance
• Low thermal resistance
d
g
s
QUICK REFERENCE DATA
V_DSS = 500 V
I_D = 5.9 A
R_DS(ON) ≤ 1.5 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The IRF830 is supplied in the
SOT78 (TO220AB) conventional
leaded package.
PINNING
PIN
DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
T_j, T_stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
T_j = 25 ˚C to 150˚C
T_j = 25 ˚C to 150˚C; R_GS = 20 kΩ
T_mb = 25 ˚C; V_GS = 10 V
T_mb = 100 ˚C; V_GS = 10 V
T_mb = 25 ˚C
T_mb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
5.9
3.7
24
125
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
E_AS
E_AR
I_AS, I_AR
Non-repetitive avalanche
energy
Unclamped inductive load, I_AS = 4.2 A;
t_p = 0.21 ms; T_j prior to avalanche = 25˚C;
V_DD ≤ 50 V; R_GS = 50 Ω; V_GS = 10 V; refer
to fig:17
Repetitive avalanche energy¹ I_AR = 5.9 A; t_p = 2.5 µs; T_j prior to
avalanche = 25˚C; R_GS = 50 Ω; V_GS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
287
10
5.9
UNIT
mJ
mJ
A
1 pulse width and repetition rate limited by T_j max.
March 1999
1
Rev 1.000