CBTD3306_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – Dual bus switch with level shifting

CBTD3306
Dual bus switch with level shifting
Rev. 8 — 1 May 2012
Product data sheet
1. General description
The CBTD3306 dual FET bus switch features independent line switches. Each switch is
disabled when the associated output enable (nOE) input is HIGH.
The CBTD3306 is characterized for operation from −40 °C to +85 °C.
2. Features and benefits
 Designed to be used in 5 V to 3.3 V level shifting applications with internal diode
 5 Ω switch connection between two ports
 TTL-compatible input levels
 Multiple package options
 Latch-up protection exceeds 100 mA per JESD78B
 ESD protection:
 HBM JESD22-A114F exceeds 2000 V
 CDM JESD22-C101E exceeds 1000 V
3. Ordering information
Table 1. Ordering information
Type number
Package
Name
CBTD3306D
SO8
CBTD3306PW
TSSOP8
CBTD3306GT
XSON8
CBTD3306GM
XQFN8
Description
plastic small outline package; 8 leads; body width 3.9 mm
plastic thin shrink small outline package; 8 leads;
body width 4.4 mm
plastic extremely thin small outline package; no leads; 8 terminals;
body 1 × 1.95 × 0.5 mm
plastic, extremely thin quad flat package; no leads; 8 terminals;
body 1.6 × 1.6 × 0.5 mm
Version
SOT96-1
SOT530-1
SOT833-1
SOT902-2
4. Marking
Table 2. Marking codes
Type number
CBTD3306D
CBTD3306PW
CBTD3306GT
CBTD3306GM
Marking code
CBD3306
D306
W06
W06