BYW29F Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast

Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYW29F series
GENERAL DESCRIPTION
Glass passivated high efficiency
rectifier diodes in full pack, plastic
envelopes, featuring low forward
voltage drop, ultra-fast recovery
times and soft recovery
characteristic. They are intended for
use in switched mode power supplies
and high frequency circuits in general
where low conduction and switching
losses are essential.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_RRM
V_F
I_F(AV)
t_rr
BYW29F-
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
MAX.
100
100
0.895
8
25
MAX.
150
150
0.895
8
25
MAX.
200
200
0.895
8
25
UNIT
V
V
A
ns
PINNING - SOD100
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1 cathode
2 anode
case
a
k
case isolated
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_F(AV)
I_F(RMS)
I_FRM
I_FSM
I²t
T_stg
T_j
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage¹
-
Average forward current²
square wave; δ = 0.5;
-
T_hs ≤ 106 ˚C
sinusoidal; a = 1.57;
-
T_hs ≤ 109 ˚C
RMS forward current
-
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
T_hs ≤ 109 ˚C
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
sinusoidal; with reapplied
I²t for fusing
V_RWM(max)
t = 10 ms
-
Storage temperature
-40
Operating junction temperature
-
-100
100
100
100
MAX.
-150
150
150
150
8
7.3
11.3
16
80
88
32
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A²s
˚C
˚C
1 T_hs ≤ 141˚C for thermal stability.
2 Neglecting switching and reverse current losses
October 1994
1
Rev 1.100