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BYW29EB Datasheet, PDF (1/8 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged
Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYW29EB, BYW29ED series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
tab
QUICK REFERENCE DATA
VR = 150 V/ 200 V
a
VF ≤ 0.895 V
3
IF(AV) = 8 A
IRRM = 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies.
The BYW29EB series is supplied in the SOT404 surface mounting package.
The BYW29ED series is supplied in the SOT428 surface mounting package.
PINNING
SOT404
SOT428
PIN
DESCRIPTION
tab
tab
1 no connection
2 cathode1
3 anode
tab cathode
2
13
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
BYW29EB/ BYW29ED
-
-
-
IF(AV)
Average rectified forward square wave; δ = 0.5; Tmb ≤ 128 ˚C -
current
IFRM
Repetitive peak forward
square wave; δ = 0.5; Tmb ≤ 128 ˚C -
current
IFSM
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
sinusoidal; with reapplied VRRM(max)
IRRM
Peak repetitive reverse
tp = 2 µs; δ = 0.001
-
surge current
IRSM
Peak non-repetitive reverse tp = 100 µs
-
surge current
Tj
Operating junction
-
temperature
Tstg
Storage temperature
- 40
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
MAX.
-150
150
-200
200
150
200
150
200
8
16
80
88
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
November 1998
1
Rev 1.300