BYW29E Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYW29E series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
k
a
• High thermal cycling performance
1
2
• Low thermal resistance
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYW29E series is supplied in
the conventional leaded SOD59
(TO220AC) package.
PINNING
PIN
DESCRIPTION
1 cathode
2 anode
tab cathode
QUICK REFERENCE DATA
V_R = 150 V/ 200 V
V_F ≤ 0.895 V
I_F(AV) = 8 A
I_RRM ≤ 0.2 A
t_rr ≤ 25 ns
SOD59 (TO220AC)
tab
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
I_RRM
I_RSM
T_j
T_stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
BYW29E
-
-
-
Average rectified forward
current
square wave; δ = 0.5; T_mb ≤ 128 ˚C -
Repetitive peak forward
current
square wave; δ = 0.5; T_mb ≤ 128 ˚C -
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
Peak repetitive reverse
surge current
sinusoidal; with reapplied V_RRM(max)
t_p = 2 µs; δ = 0.001
-
Peak non-repetitive reverse t_p = 100 µs
-
surge current
Operating junction
-
temperature
Storage temperature
- 40
MAX.
-150
150
-200
200
150
200
150
200
8
16
80
88
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
8
UNIT
kV
November 1998
1
Rev 1.300