BYW29E-200 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Ultrafast power diode

BYW29E-200
Ultrafast power diode
Rev. 5 — 20 March 2012
Product data sheet
1. Product profile
1.1 General description
Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
1.2 Features and benefits
 Fast switching
 Guaranteed ESD capability
 High thermal cycling performance
 Low on-state loss
 Low thermal resistance
 Rugged: reverse voltage surge
capability
 Soft recovery minimizes
power-consuming oscillations
1.3 Applications
 Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Symbol
V_RRM
I_F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward current
Static characteristics
V_F
forward voltage
Dynamic characteristics
t_rr
reverse recovery time
Electrostatic discharge
V_ESD
electrostatic discharge
voltage
Conditions
square-wave pulse; δ = 0.5 ;
T_mb ≤ 128 °C; see Figure 1; see Figure 2
I_F = 8 A; T_j = 150 °C; see Figure 4
I_F = 1 A; V_R = 30 V; dI_F/dt = 100 A/s;
T_j = 25 °C; ramp recovery; see Figure 5;
see Figure 7
HBM; C = 250 pF; R = 1.5 kΩ
Min Typ Max Unit
-
-
200 V
-
-
8
A
-
0.8 0.895 V
-
20
25
ns
-
-
8
kV