BYW29E-100_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – Ultrafast power diode

BYW29E-100
Ultrafast power diode
17 September 2013
Product data sheet
1. General description
Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
2. Features and benefits
• Fast switching
• Guaranteed ESD capability
• High thermal cycling performance
• Low on-state loss
• Low thermal resistance
• Rugged: reverse voltage surge capability
• Soft recovery minimizes power-consuming oscillations
3. Applications
• Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_RRM
repetitive peak reverse
voltage
I_F(AV)
average forward
current
δ = 0.5 ; T_mb ≤ 128 °C; square-wave
pulse; Fig. 1; Fig. 2
Static characteristics
V_F
forward voltage
I_F = 8 A; T_j = 150 °C; Fig. 4
Dynamic characteristics
t_rr
reverse recovery time I_F = 1 A; V_R = 30 V; dI_F/dt = 100 A/µs;
T_j = 25 °C; ramp recovery; Fig. 5; Fig. 7
Electrostatic discharge
V_ESD
electrostatic discharge HBM; C = 250 pF; R = 1.5 kΩ
voltage
Min Typ Max Unit
-
-
100 V
-
-
8
A
-
0.8 0.895 V
-
20
25
ns
-
-
8
kV
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