BYV79E Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV79E series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
k
a
• High thermal cycling performance
1
2
• Low thermal resistance
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYV79E series is supplied in
the conventional leaded SOD59
(TO220AC) package.
PINNING
PIN
DESCRIPTION
1 cathode
2 anode
tab cathode
QUICK REFERENCE DATA
V_R = 150 V/ 200 V
V_F ≤ 0.9 V
I_F(AV) = 14 A
I_RRM ≤ 0.2 A
t_rr ≤ 30 ns
SOD59 (TO220AC)
tab
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T_mb ≤ 145˚C
BYV79E
-
-
-
I_F(AV)
Average forward current¹
square wave
-
δ = 0.5; T_mb ≤ 120 ˚C
I_FRM
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
T_mb ≤ 120 ˚C
I_FSM
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
sinusoidal; with reapplied
V_RWM(max)
I_RRM
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
I_RSM
Non-repetitive peak reverse t_p = 100 µs
-
current
T_stg
Storage temperature
-40
T_j
Operating junction temperature
-
1. Neglecting switching and reverse current losses.
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MAX.
-150
150
150
150
-200
200
200
200
14
28
150
160
UNIT
V
V
V
A
A
A
A
0.2
A
0.2
A
150
˚C
150
˚C
MIN.
-
MAX.
8
UNIT
kV
July 1998
1
Rev 1.200