BYV74F Datasheet, PDF (1/6 Pages) NXP Semiconductors – Dual rectifier diodes ultrafast

Philips Semiconductors
Dual rectifier diodes
ultrafast
Product specification
BYV74F series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
a1
a2
1
3
k2
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYV74F series is supplied in
the conventional leaded SOT199
package.
PINNING
PIN
DESCRIPTION
1 anode 1
2 cathode
3 anode 2
tab isolated
QUICK REFERENCE DATA
V_R = 300 V/ 400 V/ 500 V
V_F ≤ 1.12 V
I_O(AV) = 20 A
t_rr ≤ 60 ns
SOT199
case
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
T_stg
T_j
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T_mb ≤ 117˚C
BYV74F
-
-
-
Average rectified output current square wave; δ = 0.5;
-
(both diodes conducting)¹
T_hs ≤ 54 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_hs ≤ 54 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode.
t = 8.3 ms
-
sinusoidal; with reapplied
V_RRM(max)
Storage temperature
-40
Operating junction temperature
-
-300
300
300
300
MAX.
-400
400
400
400
20
30
150
160
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
˚C
˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
three terminals to external
heatsink
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
- 2500 V
-
22
-
pF
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300