BYV74 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Dual rectifier diodes ultrafast

Philips Semiconductors
Dual rectifier diodes
ultrafast
Product specification
BYV74 series
GENERAL DESCRIPTION
Glass passivated, high efficiency
rectifier diodes in a plastic envelope
featuring low forward voltage drop,
ultra fast reverse recovery times and
soft recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general, where both low
conduction losses and low switching
losses are essential.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX.
V_RRM
V_F
I_O(AV)
t_rr
BYV74- 300
Repetitive peak reverse 300
voltage
Forward voltage
1.12
Average output current
30
(both diodes conducting)
Reverse recovery time
60
MAX.
400
400
1.12
30
60
MAX.
500
500
1.12
30
60
UNIT
V
V
A
ns
PINNING - SOT93
PIN
DESCRIPTION
1 Anode 1 (a)
2 Cathode (k)
3 Anode 2 (a)
tab Cathode (k)
PIN CONFIGURATION
tab
123
SYMBOL
a1
a2
1
3
k2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_O(RMS)
I_FRM
I_FSM
I²t
T_stg
T_j
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
T_mb ≤ 136˚C
-
Average output current (both square wave; δ = 0.5;
-
diodes conducting)¹
T_mb ≤ 94 ˚C
sinusoidal; a = 1.57;
-
T_mb ≤ 98 ˚C
RMS output current (both
-
diodes conducting)
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_mb ≤ 94 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode.
t = 8.3 ms
-
sinusoidal; with reapplied
I²t for fusing
V_RRM(max)
t = 10 ms
-
Storage temperature
-40
Operating junction temperature
-
-300
300
300
300
MAX.
-400
400
400
400
30
27
43
30
150
160
112
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
A
A
A²s
˚C
˚C
1 Neglecting switching and reverse current losses.
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.
August 1996
1
Rev 1.200