BYV72F Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast

Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYV72F series
GENERAL DESCRIPTION
Glass passivated, high efficiency,
dual, rectifier diodes in a full pack,
plastic envelope, featuring low
forward voltage drop, ultra-fast
recovery times and soft recovery
characteristic. They are intended for
use in switched mode power supplies
and high frequency circuits in general
where low conduction and switching
losses are essential.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_RRM
V_F
I_O(AV)
t_rr
BYV72F-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
MAX.
100
100
0.90
20
28
MAX.
150
150
0.90
20
28
MAX.
200
200
0.90
20
28
UNIT
V
V
A
ns
PINNING - SOT199
PIN
DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
PIN CONFIGURATION
case
1 23
SYMBOL
a1
a2
1
3
k2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_O(RMS)
I_FRM
I_FSM
I²t
T_stg
T_j
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage¹
-
Output current (both diodes
square wave; δ = 0.5;
-
conducting)²
T_hs ≤ 78 ˚C
sinusoidal; a = 1.57;
-
T_hs ≤ 78 ˚C
RMS forward current
-
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_hs ≤ 78 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
sinusoidal; with reapplied
I²t for fusing
V_RWM(max)
t = 10 ms
-
Storage temperature
-40
Operating junction temperature
-
-100
100
100
100
MAX.
-150
150
150
150
20
20
20
30
150
160
112
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A²s
˚C
˚C
1 T_hs ≤ 125˚C for thermal stability.
2 Neglecting switching and reverse current losses.
October 1994
1
Rev 1.100