BYV72EW Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV72EW series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
a2
1
3
k2
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier
diodes intended for use as output
rectifiers in high frequency switched
mode power supplies.
The BYV72EW series is supplied in
the conventional leaded SOT429
(TO247) package.
PINNING
PIN
DESCRIPTION
1 anode 1
2 cathode
3 anode 2
tab cathode
QUICK REFERENCE DATA
V_R = 150 V/ 200 V
V_F ≤ 0.85 V
I_O(AV) = 30 A
I_RRM = 0.2 A
t_rr ≤ 28 ns
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T_mb ≤ 144˚C
BYV72EW
-
-
-
I_O(AV)
I_FRM
I_FSM
I_RRM
I_RSM
T_stg
T_j
Average rectified output current square wave
-
(both diodes conducting)¹
δ = 0.5; T_mb ≤ 104 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_mb ≤ 104 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
sinusoidal; with reapplied
V_RWM(max)
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
per diode
Non-repetitive peak reverse t_p = 100 µs
-
current per diode
Storage temperature
-40
Operating junction temperature
-
1 Neglecting switching and reverse current losses.
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MAX.
-150
150
150
150
-200
200
200
200
30
30
150
160
UNIT
V
V
V
A
A
A
A
0.2
A
0.2
A
150
˚C
150
˚C
MIN.
-
MAX.
8
UNIT
kV
October 1998
1
Rev 1.200