BYV72EF Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV72EF series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
a1
a2
1
3
k2
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier
diodes intended for use as output
rectifiers in high frequency switched
mode power supplies.
The BYV72EF series is supplied in
the conventional leaded SOT199
package.
PINNING
PIN
DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab isolated
QUICK REFERENCE DATA
V_R = 150 V/ 200 V
V_F ≤ 0.9 V
I_O(AV) = 20 A
I_RRM = 0.2 A
t_rr ≤ 28 ns
SOT199
case
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
I_RRM
I_RSM
T_stg
T_j
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T_hs ≤ 125˚C
BYV72EF
-
-
-
Average rectified output current square wave
-
(both diodes conducting)¹
δ = 0.5; T_hs ≤ 78 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_hs ≤ 78 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
sinusoidal; with reapplied
V_RWM(max)
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
per diode
Non-repetitive peak reverse t_p = 100 µs
-
current per diode
Storage temperature
-40
Operating junction temperature
-
MAX.
-150
150
150
150
-200
200
200
200
20
30
150
160
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
1 Neglecting switching and reverse current losses.
July 1998
1
Rev 1.100