BYV42E Datasheet, PDF (1/7 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV42E, BYV42EB series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 150 V/ 200 V
V_F ≤ 0.85 V
I_O(AV) = 30 A
I_RRM = 0.2 A
t_rr ≤ 28 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV42E series is supplied in the SOT78 conventional leaded package.
The BYV42EB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
tab
tab
1 anode 1 (a)
2 cathode (k) ¹
3 anode 2 (a)
2
tab cathode (k)
1 23
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V_RRM
V_RWM
V_R
BYV42E / BYV42EB
Peak repetitive reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
T_mb ≤ 144˚C
-
-150
150
150
150
-200
200
V
200
V
200
V
I_O(AV)
Average rectified output current square wave
-
(both diodes conducting)
δ = 0.5; T_mb ≤ 108 ˚C
I_FRM
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_mb ≤ 108 ˚C
I_FSM
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
30
A
30
A
150
A
160
A
sinusoidal; with reapplied
V_RWM(max)
I_RRM
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
per diode
0.2
A
I_RSM
Non-repetitive peak reverse t_p = 100 µs
current per diode
-
0.2
A
T_stg
Storage temperature
T_j
Operating junction temperature
-40
150
˚C
-
150
˚C
1. It is not possible to make connection to pin 2 of the SOT404 package
2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting
tab.
July 1998
1
Rev 1.200