BYV410-600_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Dual enhanced ultrafast power diode

BYV410-600
Dual enhanced ultrafast power diode
Rev. 2 — 5 August 2011
Product data sheet
1. Product profile
1.1 General description
Dual enhanced ultrafast power diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
 High thermal cycling performance
 Low on state losses
 Low thermal resistance
 Soft recovery characteristic minimizes
power consuming oscillations
1.3 Applications
 Dual mode (DCM and CCM) PFC
 Power Factor Correction (PFC) for
Interleaved Topology
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_RRM
I_O(AV)
repetitive peak reverse
voltage
average output current
square-wave pulse; δ = 0.5 ;
T_mb ≤ 92 °C; both diodes
conducting;
see Figure 1; see Figure 2
Static characteristics
V_F
forward voltage
I_F = 10 A; T_j = 150 °C
I_F = 10 A; T_j = 25 °C;
see Figure 4
Dynamic characteristics
t_rr
reverse recovery time I_F = 1 A; V_R = 30 V;
dI_F/dt = 100 A/µs; T_j = 25 °C;
see Figure 5
Q_r
recovered charge
I_F = 1 A; V_R = 30 V;
dI_F/dt = 100 A/µs
Min Typ Max Unit
-
-
600 V
-
-
20 A
-
1.3 1.9 V
-
1.4 2.1 V
-
20 35 ns
-
15 28 nC