BYV32F Datasheet, PDF (1/7 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV32F, BYV32EX series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 150 V/ 200 V
V_F ≤ 0.85 V
I_O(AV) = 12 A
I_RRM = 0.2 A
t_rr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32F series is supplied in the SOT186 package.
The BYV32EX series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
case
case
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
I_RRM
I_RSM
T_stg
T_j
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
BYV32F / BYV32EX
-
-
-
Average rectified output current square wave
-
(both diodes conducting)¹
δ = 0.5; T_hs ≤ 95 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_hs ≤ 95 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
sinusoidal; with reapplied
V_RWM(max)
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
per diode
Non-repetitive peak reverse t_p = 100 µs
-
current per diode
Storage temperature
-40
Operating junction temperature
-
MAX.
-150
150
150
150
-200
200
200
200
12
20
125
137
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
1 Neglecting switching and reverse current losses
October 1998
1
Rev 1.300