BYV32E-200P_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – Dual ultrafast power diode

BYV32E-200P
Dual ultrafast power diode
14 May 2015
Product data sheet
1. General description
Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package
2. Features and benefits
• Ultra low leakage current
• High junction temperature up to 175 °C
• Low on-state loss
• Fast switching
• Soft recovery characteristic minimizes power consuming oscillations
• High reverse surge capability
• High thermal cycling performance
• Low thermal resistance
3. Applications
• Home appliance power supply
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_RRM
repetitive peak reverse
voltage
I_O(AV)
average output current δ = 0.5; T_mb ≤ 149 °C; Square-ware
pulse
I_FSM
non-repetitive peak
T_j(init) = 25 °C; t_p = 8.3 ms; SIN; per
forward current
diode; Fig. 4
I_RRM
repetitive peak reverse t_p = 2 µs; δ = 0.001; per diode
current
V_ESD
electrostatic discharge HBM; C = 250 pF; R = 1.5 kΩ; all pins
voltage
Dynamic characteristics
t_rr
reverse recovery time I_F = 1 A; V_R = 30 V; dI_F/dt = 100 A/µs;
T_j = 25 °C; Fig. 7
Static characteristics
V_F
forward voltage
I_F = 8 A; T_j = 150 °C; Fig. 6
Min Typ Max Unit
-
-
200 V
-
-
20
A
-
-
137 A
-
-
0.2 A
-
-
8
kV
-
18
25
ns
-
0.76 0.85 V
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