BYV32 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast

Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYV32 series
GENERAL DESCRIPTION
Glass passivated high efficiency dual
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_RRM
V_F
I_O(AV)
t_rr
BYV32-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
MAX.
100
100
0.85
20
25
MAX.
150
150
0.85
20
25
MAX.
200
200
0.85
20
25
UNIT
V
V
A
ns
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
1 anode 1 (a)
2 cathode (k)
a1
a2
3 anode 2 (a)
tab cathode (k)
k
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_O(RMS)
I_FRM
I_FSM
I²t
T_stg
T_j
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
-
Output current (both diodes
square wave
-
conducting)¹
δ = 0.5; T_mb ≤ 115 ˚C
sinusoidal
-
RMS forward current
a = 1.57; T_mb ≤ 118 ˚C
-
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_mb ≤ 115 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
sinusoidal; with reapplied
I²t for fusing
V_RWM(max)
t = 10 ms
-
Storage temperature
-40
Operating junction temperature
-
-100
100
100
100
MAX.
-150
150
150
150
20
18
28
20
125
137
78
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A²s
˚C
˚C
1 Neglecting switching and reverse current losses
October 1994
1
Rev 1.100