BYV29F Datasheet, PDF (1/7 Pages) NXP Semiconductors – Rectifier diodes ultrafast

Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYV29F, BYV29X series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
SYMBOL
k
1
QUICK REFERENCE DATA
V_R = 300 V/ 400 V/ 500 V
a
V_F ≤ 1.03 V
2
I_F(AV) = 9 A
t_rr ≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic
lighting ballasts and high frequency switching circuits in general.
The BYV29F series is supplied in the SOD100 package.
The BYV29X series is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
case
1 cathode (k)
case
2 anode (a)
tab isolated
12
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_R
I_F(AV)
I_FSM
T_stg
T_j
BYV29F/BYV29X
Peak repetitive reverse voltage
-
Continuous reverse voltage
T_hs ≤ 138˚C¹
-
Average forward current²
square wave; δ = 0.5;
-
T_hs ≤ 90 ˚C
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
sinusoidal; with reapplied
V_RRM(max)
Storage temperature
-40
Operating junction temperature
-
-300
300
300
MAX.
-400
400
400
9
100
110
150
150
-500
500
500
UNIT
V
V
A
A
A
˚C
˚C
1 T_hs de-rating for thermal stability.
2 Neglecting switching and reverse current losses
February 1999
1
Rev 1.400