BYV29F-600 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Enhanced ultrafast power diode

BYV29F-600
Enhanced ultrafast power diode
Rev. 02 — 7 March 2011
Product data sheet
1. Product profile
1.1 General description
Enhanced ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
1.2 Features and benefits
„ High thermal cycling performance
„ Low on-state losses
„ Low thermal resistance
„ Soft recovery characteristic
1.3 Applications
„ Dual Mode (DCM and CCM) PFC
„ Power Factor Correction (PFC) for
Interleaved Topology
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_RRM
repetitive peak reverse
voltage
I_F(AV)
average forward current square-wave pulse; δ = 0.5 ;
T_mb ≤ 115 °C; see Figure 1;
see Figure 2
Static characteristics
V_F
forward voltage
I_F = 8 A; T_j = 25 °C;
see Figure 5
I_F = 8 A; T_j = 150 °C;
see Figure 5
Dynamic characteristics
t_rr
reverse recovery time I_F = 1 A; V_R = 30 V;
dI_F/dt = 100 A/µs;
T_j = 25 °C; see Figure 6
Min Typ Max Unit
-
-
600 V
-
-
9
A
-
1.45 1.9 V
-
1.25 1.7 V
-
17.5 35 ns