BYV29 Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes ultrafast

Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYV29 series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
1
QUICK REFERENCE DATA
V_R = 300 V/ 400 V/ 500 V
a
V_F ≤ 1.03 V
2
I_F(AV) = 9 A
t_rr ≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYV29 series is supplied in the
conventional leaded SOD59
(TO220AC) package.
PINNING
PIN
DESCRIPTION
1 cathode
2 anode
tab cathode
SOD59 (TO220AC)
tab
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
T_stg
T_j
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
BYV29
-
-
-
Average forward current¹
square wave; δ = 0.5;
-
T_mb ≤ 123 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
T_mb ≤ 123 ˚C
Non-repetitive peak forward t = 10 ms
-
current.
t = 8.3 ms
-
sinusoidal; with reapplied
V_RRM(max)
Storage temperature
-40
Operating junction temperature
-
-300
300
300
300
MAX.
-400
400
400
400
9
18
100
110
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
in free air.
MIN. TYP. MAX. UNIT
-
-
2.5 K/W
-
60
- K/W
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300